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These processes are used for a wide variety of applications inВ semiconductorВ manufacturing includingВ dopant activation,В thermal oxidation, metal reflow and chemical vapor deposition. Such rapid heating rates are often attained by high intensity lamps or lasers. During cooling, however, wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock. Rapid Thermal ProcessingВ ( RTP) refers to aВ semiconductorВ manufacturing process which heatsВ silicon wafersВ to high temperatures (over 1,000 вЊ) on a timescale of several seconds or less. To achieve short annealing times and quick throughput, sacrifices are made in temperature and process uniformity, temperature measurement and control, and wafer stress. UnlikeВ furnace annealsВ they are short in duration, processing each wafer in several minutes. Rapid thermal anneals are performed by equipment that heats a single wafer at a time using either lamp based heating, a hot chuck, or a hot plate that a wafer is brought near. Wafers can be heated in order to activateВ dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage fromВ ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate. Unique heat treatments are designed for different effects.

It is a process used inВ semiconductor device fabricationВ which consists of heating a singleВ waferВ at a time in order to affect its electrical properties.

Rapid thermal anneal (RTA) is a subset of Rapid Thermal Processing.

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